PART |
Description |
Maker |
RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No ; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6) FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 积极的固定电压稳压器 FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45) FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
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|
RJK0451DPB-00-J5 RJK0451DPB13 |
40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
35SCGQ060 |
35A 60V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package
|
International Rectifier
|
SBT350-06J |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 60V, 35A Rectifier Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 35A Rectifier
|
Sanyo Semicon Device
|
BYY58-900 BYY57 BYY57-100 BYY57-1000 BYY57-1100 BY |
35A Silicon Power Rectifier Diode 35 A, 900 V, SILICON, RECTIFIER DIODE 35A Silicon Power Rectifier Diode 35A条硅功率整流二极 35A Silicon Power Rectifier Diode 35 A, 1400 V, SILICON, RECTIFIER DIODE
|
ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
|
RJK0656DPB-00-J5 |
60V, 40A, 5.6m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0653DPB RJK0653DPB-00-J5 RJK0653DPB-13 |
60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
BP35-06G BP35-08G BP35-005G BP35-01G BP35-02G BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
SR-5-1.25A-BK COOPERINDUSTRIES-SR-5-1.25A-AP SR-5- |
FUSE 1.25A 250V T-LAG IEC SHORT TIME DELAY BLOW ELECTRIC FUSE, 1.25A, 250VAC, 35A (IR), THROUGH HOLE FUSE 1.6A 250V T-LAG IEC SHORT PC Board Fuse; Current Rating:1A; Voltage Rating:250V; Fuse Terminals:Radial Lead; Fuse Size/Group:Subminiature; Fuse Type:Time Delay; Interrupting Current Max:35A; Leaded Process Compatible:Yes; Packaging:Ammo Pack FUSE 1A 250V T-LAG IEC SHORT Subminiature Fuses
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Cooper Bussmann, Inc. COOPER INDUSTRIES List of Unclassifed Man...
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